? semiconductor components industries, llc, 2007 october, 2016 ? rev. 6 1 publication order number: nss1c200l/d nss1c200l, nsv1c200l 100 v, 2.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 100 vdc collector-base voltage v cbo ? 140 vdc emitter-base voltage v ebo ? 7.0 vdc collector current ? continuous i c ? 2.0 a collector current ? peak i cm ? 3.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 490 3.7 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 255 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 710 4.3 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 176 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces. device package shipping ? ordering information nss1c200lt1g, nsv1c200lt1g sot ? 23 (pb ? free) 3000/tape & reel marking diagram collector 3 1 base 2 emitter sot ? 23 (to ? 236) case 318 style 6 3 2 1 www. onsemi.com ? 100 volts, 2.0 amps pnp low v ce(sat) transistor ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 vl m vl = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location)
nss1c200l, nsv1c200l www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 100 vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 140 vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 7.0 vdc collector cutoff current (v cb = ? 140 vdc, i e = 0) i cbo ? 100 nadc emitter cutoff current (v eb = ? 6.0 vdc) i ebo ? 50 nadc on characteristics dc current gain (note 3) (i c = ? 10 ma, v ce = ? 2.0 v) (i c = ? 500 ma, v ce = ? 2.0 v) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 150 120 80 50 240 360 collector ? emitter saturation voltage (note 3) (i c = ? 0.1 a, i b = ? 0.01 a) (i c = ? 0.5 a, i b = ? 0.05 a) (i c = ? 1.0 a, i b = ? 0.100 a) (i c = ? 2.0 a, i b = ? 0.200 a) v ce(sat) ? 0.040 ? 0.080 ? 0.115 ? 0.250 v base ? emitter saturation voltage (note 3) (i c = ? 1.0 a, i b = ? 0.100 a) v be(sat) ? 0.950 v base ? emitter turn ? on voltage (note 3) (i c = ? 1.0 a, v ce = ? 2.0 v) v be(on) ? 0.850 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 120 mhz input capacitance (v eb = 2.0 v, f = 1.0 mhz) cibo 200 pf output capacitance (v cb = 10 v, f = 1.0 mhz) cobo 22 pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulsed condition: pulse width = 300 msec, duty cycle 2%. 0.60 0.50 0.40 0.30 0.20 0.10 0 0 20 160 40 60 140 120 100 80 t a , ambient temperature ( c) figure 1. power derating p d , power dissipation (w) note 2 note 1
nss1c200l, nsv1c200l www. onsemi.com 3 0 100 200 300 400 500 0.001 0.01 0.1 1 10 i c , collector current (a) figure 2. dc current gain dc, current gain 150 c 25 c ? 55 c v ce = 2 v 0 100 200 300 400 500 0.001 0.01 0.1 1 10 i c , collector current (a) figure 3. dc current gain dc, current gain 150 c 25 c ? 55 c v ce = 4 v 0.01 0.1 1 0.001 0.01 0.1 1 10 i c , collector current (a) figure 4. collector ? emitter saturation voltage v ce(sat) , collector ? emitter voltage (v) 150 c ? 55 c 25 c i c /i b = 10 0.01 0.1 1 0.001 0.01 0.1 1 10 i c , collector current (a) figure 5. collector ? emitter saturation voltage v ce(sat) , collector ? emitter voltage (v) i c /i b = 50 25 c 150 c ? 55 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 i c , collector current (a) figure 6. base ? emitter saturation voltage v be(sat) , base ? emitter voltage (v) ? 55 c 150 c 25 c i c /i b = 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 v be(sat) , base ? emitter voltage (v) i c , collector current (a) figure 7. base ? emitter saturation voltage i c /i b = 50 ? 55 c 150 c 25 c
nss1c200l, nsv1c200l www. onsemi.com 4 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 v be(on) , base ? emitter voltage (v) i c , collector current (a) figure 8. base ? emitter saturation voltage v ce = 2 v ? 55 c 150 c 25 c 0.01 0.10 1.00 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 1.0e+0 0 i c = 0.1 a 0.5 a 1 a 2 a 3 a t j = 25 c v ce(sat) , collector ? emitter voltage (v) i b , base current (a) figure 9. collector saturation region 0 100 200 300 400 012345678 c ibo , input capacitance (pf) v ce , emitter base voltage (v) figure 10. input capacitance t j = 25 c f test = 1 mhz 0 10 20 30 40 50 60 70 80 0 102030405060708090100 t j = 25 c f test = 1 mhz v cb , collector base voltage (v) figure 11. output capacitance c obo , output capacitance (pf) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 f ta u , current ? gain bandwidth product (mhz) i c , collector current (a) figure 12. current ? gain bandwidth product t j = 25 c f test = 1 mhz v ce = 10 v 0.01 0.1 1 10 0.1 1 10 100 1 ms 10 ms 100 ms thermal limit v ce , collector emitter voltage (v) figure 13. i c , collector current (a)
nss1c200l, nsv1c200l www. onsemi.com 5 t, pulse time (s) figure 14. transient thermal resistnce d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 1000 100 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 r(t), ( c/w)
nss1c200l, nsv1c200l www. onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss1c200l/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ?
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